Datasheet

LPC178X_7X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 5 — 9 September 2014 80 of 122
NXP Semiconductors
LPC178x/7x
32-bit ARM Cortex-M3 microcontroller
11. Dynamic characteristics
11.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
[1] EEPROM clock frequency = 375 kHz. Programming/erase times increase with decreasing EEPROM clock
frequency.
Table 15. Flash characteristics
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance -
[1]
10000 100000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming
time
-
[2]
0.95 1 1.05 ms
Table 16. EEPROM characteristics
T
amb
=  40  Cto+85  C; V
DD(REG)(3V3)
= 2.7 V to 3.6 V.
Symbol Parameter Conditions Min Typ Max Unit
f
clk
clock frequency - 200 375 400 kHz
N
endu
endurance - 100000 500000 - cycles
t
ret
retention time powered 10 - - years
unpowered 10 - - years
t
er
erase time 64 bytes
[1]
-1.8 -ms
t
prog
programming
time
64 bytes
[1]
-1.1 -ms