Datasheet

DRAFT DRAFT DRAFT DR DRAFT DRAFT DRAFT
D
RAF
DRAFT DRAFT DRA
F
T D
RAFT DR
AFT D
DRA
F
T DRAFT DRAFT
D
RAFT
DRAFT
D
RAFT
DRA
LPC15xx All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Objective data sheet Rev. 1.0 — 16 January 2014 52 of 98
NXP Semiconductors
LPC15xx
32-bit ARM Cortex-M3 microcontroller
10. Static characteristics
Table 10. Static characteristics
T
amb
= 40 C to +105 C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
DD
supply voltage (core
and external rail)
[2]
2.4 3.3 V
DDA
V
V
DDA
analog supply voltage 2.4 3.3 3.6 V
V
ref
reference voltage on pin VREFP_DAC_VDDCMP 2.4 - V
DDA
V
on pin VREFP_ADC 2.7 - V
DDA
V
V
BAT
battery supply voltage 2.4 3.3 3.6 V
I
DD
supply current Active mode; code
while(1){}
executed from flash;
system clock = 12 MHz; default
mode; V
DD
= 3.3 V
[3][4][5]
[7][8]
-4.3 -mA
system clock = 12 MHz;
low-current mode; V
DD
= 3.3 V
[3][4][5]
[7][8]
-2.7 -mA
system clock = 72 MHz; default
mode; V
DD
= 3.3 V
[3][4][7]
[8][10]
- 19.3 - mA
system clock = 72 MHz;
low-current mode; V
DD
= 3.3 V
[3][4][7]
[8][10]
-18 -mA
Sleep mode;
system clock = 12 MHz; default
mode; V
DD
= 3.3 V
[3][4][5]
[7][8]
-2.1 -mA
system clock = 12 MHz;
low-current mode; V
DD
= 3.3 V
[3][4][5]
[7][8]
-1.6 -mA
system clock = 72 MHz; default
mode; V
DD
= 3.3 V
[3][4][10]
[7][8]
-8.0 -mA
system clock = 72 MHz;
low-current mode; V
DD
= 3.3 V
[3][4][10]
[7][8]
-7.8 -mA
I
DD
supply current Deep-sleep mode;
V
DD
= 3.3 V;
T
amb
=25C
[3][4][11]
-
300 380 A
T
amb
=105C - - 620 A
I
DD
supply current Power-down mode;
V
DD
= 3.3 V
T
amb
=25C
[3][4][11]
-
3.8 8 A
T
amb
=105C - - 163 A
I
DD
supply current Deep power-down mode; V
DD
=
3.3 V; VBAT = 0 or VBAT = 3.0 V
RTC oscillator running
T
amb
=25C
[3][12][13]
-1.1 1.3A
T
amb
=105C--11
RTC oscillator input grounded;
T
amb
=25C
[3][12]
- 560 - nA