Datasheet

LPC1311_13_42_43 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 6 June 2012 50 of 74
NXP Semiconductors
LPC1311/13/42/43
32-bit ARM Cortex-M3 microcontroller
10. Dynamic characteristics
10.1 Power-up ramp conditions
[1] See Figure 25.
[2] The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
10.2 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Table 12. Power-up characteristics
T
amb
= −40 °C to +85 °C.
Symbol Parameter Conditions Min Typ Max Unit
t
r
rise time at t = t
1
: 0 < V
I
≤ 400 mV
[1]
0- 500 ms
t
wait
wait time
[1][2]
12 - - μs
V
I
input voltage at t = t
1
on pin V
DD
0 - 400 mV
Condition: 0 < V
I
≤ 400 mV at start of power-up (t = t
1
)
Fig 25. Power-up ramp
V
DD
0
400 mV
t
r
t
wait
t = t
1
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Table 13. Flash characteristics
T
amb
= −40 °C to +85 °C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming time
[2]
0.95 1 1.05 ms