Datasheet

LPC11E6X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1.2 — 21 May 2014 75 of 89
NXP Semiconductors
LPC11E6x
32-bit ARM Cortex-M0+ microcontroller
(1) See Section 14.3 “XTAL input and crystal oscillator component selection” for the values of C1 and C2.
(2) See Section 14.5 “
RTC oscillator component selection” for the values of C3 and C4.
(3) Position the decoupling capacitors of 0.1 μF and 0.01 μF as close as possible to the V
DD
pin. Add one set of decoupling
capacitors to each V
DD
pin.
(4) Position the decoupling capacitors of 0.1 μF as close as possible to the VREFN and V
DDA
pins. The 10 μF bypass capacitor
filters the power line. Tie V
DDA
and VREFP to V
DD
if the ADC is not used. Tie VREFN to V
SS
if ADC is not used.
(5) Position the decoupling capacitor of 0.1 μF as close as possible to the VBAT pin. Tie VBAT to V
DD
if not used.
(6) Uses the ARM 10-pin interface for SWD.
(7) When measuring signals of low frequency, use a low-pass filter to remove noise and to improve ADC performance. Also see
Ref. 3
.
Fig 41. Power, clock, and debug connections
SWDIO/PIO0_15
SWCLK/PIO0_10
RESET/PIO0_0
V
SS
V
SSA
PIO0_1
PIO0_3
ADC_0
PIO2_0/XTALIN
PIO2_1/XTALOUT
RTCXIN
RTCXOUT
V
DD
(2 to 5 pins)
V
DDA
VREFP
VREFN
VBAT
LPC11E6x
3.3 V
3.3 V
DGND
DGND
DGND
DGND
AGND
1
3
5
7
9
2
4
6
8
10
Note 6
Note 7
C1
C2
Note 1
DGND
DGND
DGND
DGND
C3
C4
Note 2
Note 3
Note 4
Note 4
Note 5
0.01 μF
0.1 μF
3.3 V
DGND
10 μF
0.1 μF
3.3 V
3.3 V
AGND
AGND
AGND
10 μF
0.1 μF
0.1 μF
0.1 μF
ISP select pins
n.c.
n.c.
n.c.
SWD connector
3.3 V
~10 kΩ - 100 kΩ
~10 kΩ - 100 kΩ
aaa-013307