Datasheet

LPC11E6X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1.2 — 21 May 2014 71 of 89
NXP Semiconductors
LPC11E6x
32-bit ARM Cortex-M0+ microcontroller
14. Application information
14.1 ADC usage notes
The following guidelines show how to increase the performance of the ADC in a noisy
environment beyond the ADC specifications listed in Table 22
:
• The ADC input trace must be short and as close as possible to the LPC11E6x chip.
• The ADC input traces must be shielded from fast switching digital signals and noisy
power supply lines.
• If the ADC and the digital core share the power supply, the power supply line must be
adequately filtered.
• To improve the ADC performance in a very noisy environment, put the device in Sleep
mode during the ADC conversion.
14.2 Typical wake-up times
[1] The wake-up time measured is the time between when a GPIO input pin is triggered to wake up the device
from the low-power modes and from when a GPIO output pin is set in the interrupt service routine (ISR)
wake-up handler.
[2] IRC enabled, all peripherals off.
V
DDA
= 3.3 V; measured on a typical silicon sample.
Fig 37. Typical LLS fit of the temperature sensor output voltage
DDD
     





WHPSHUDWXUH&
9
2
9
2
P9P9P9
Table 25. Typical wake-up times
V
DD
= 3.3 V; T
amb
= 25 °C.
Power modes Wake-up time
Sleep mode (12 MHz)
[1][2]
2.6 s
Deep-sleep mode
[1][3]
4.4 s
Power-down mode
[1][3]
86.8 s
Deep Power-down mode
[4]
276 s