Datasheet

LPC11E6X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1.2 — 21 May 2014 58 of 89
NXP Semiconductors
LPC11E6x
32-bit ARM Cortex-M0+ microcontroller
12. Dynamic characteristics
12.1 Flash/EEPROM memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes to the flash. T
amb
<= +85 C. Flash programming with
IAP calls (see LPC11E6x user manual).
12.2 External clock for the oscillator in slave mode
Remark: The input voltage on the XTAL1/2 pins must be  1.95 V (see Table 8). For
connecting the oscillator to the XTAL pins, also see Section 14.3
.
[1] Parameters are valid over operating temperature range unless otherwise specified.
Table 10. Flash characteristics
T
amb
=  40  C to +105  C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as
specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 20 - years
unpowered 20 40 - years
t
er
erase time page or multiple
consecutive pages,
sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 11. EEPROM characteristics
T
amb
=  40  Cto+85  C; V
DD
= 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure rate <
10 ppm for parts as specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance 100000 1000000 - cycles
t
ret
retention time powered 100 200 - years
unpowered 150 300 - years
t
prog
programming
time
64 bytes - 2.9 - ms
Table 12. Dynamic characteristic: external clock (XTALIN input)
T
amb
=  40  C to +105  C; V
DD
over specified ranges.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
 0.4 - - ns
t
CLCX
clock LOW time T
cy(clk)
 0.4 - - ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns