Datasheet

LPC11E6X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1.2 — 21 May 2014 43 of 89
NXP Semiconductors
LPC11E6x
32-bit ARM Cortex-M0+ microcontroller
11. Static characteristics
jc thermal resistance junction-to-case 18 C/W
jb thermal resistance junction-to-board 23 C/W
LQFP100
ja thermal resistance
junction-to-ambient
JEDEC (4.5 in 4 in)
0 m/s 49 C/W
1 m/s 44 C/W
2.5 m/s 41 C/W
8-layer (4.5 in 3 in)
0 m/s 66 C/W
1 m/s 55 C/W
2.5 m/s 51 C/W
jc thermal resistance junction-to-case 18 C/W
jb thermal resistance junction-to-board 24 C/W
Table 7. Thermal resistance value (C/W): ±15 %
Symbol Parameter Conditions Typ Unit
Table 8. Static characteristics
T
amb
=
40
C to +105
C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
DD
supply voltage (core
and external rail)
2.4 3.3 3.6 V
V
DDA
analog supply voltage 2.4 3.3 3.6 V
V
ref
reference voltage on pin VREFP 2.4 - V
DDA
V
V
BAT
battery supply voltage 2.4 3.3 3.6 V
I
DD
supply current Active mode; code
while(1){}
executed from flash
system clock = 12 MHz; default
mode; V
DD
= 3.3 V
[2][3][4]
[6][7]
-2.3- mA
system clock = 12 MHz;
low-current mode; V
DD
= 3.3 V
[2][3][4]
[6][7]
-1.5- mA
system clock = 50 MHz; default
mode; V
DD
= 3.3 V
[2][3][6]
[7][9]
-7.8- mA
system clock = 50 MHz;
low-current mode; V
DD
= 3.3 V
[2][3][6]
[7][9]
-6.4- mA