Datasheet
LPC11E6X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1.2 — 21 May 2014 41 of 89
NXP Semiconductors
LPC11E6x
32-bit ARM Cortex-M0+ microcontroller
9. Limiting values
[1] The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
[2] Maximum/minimum voltage above the maximum operating voltage (see Table 8
) and below ground that can be applied for a short time
(< 10 ms) to a device without leading to irrecoverable failure. Failure includes the loss of reliability and shorter lifetime of the device.
[3] Applies to all 5 V tolerant I/O pins except true open-drain pins PIO0_4 and PIO0_5.
[4] Including the voltage on outputs in 3-state mode.
[5] V
DD(IO)
present or not present. Compliant with the I
2
C-bus standard. 5.5 V can be applied to this pin when V
DD(IO)
is powered down.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage
[2]
0.5 4.6 V
V
DDA
analog supply voltage 0.5 4.6 V
V
ref
reference voltage on pin VREFP 0.5 4.6 V
V
BAT
battery supply voltage 0.5 4.6 V
V
I
input voltage 5 V tolerant I/O
pins; only valid
when the V
DD(IO)
supply voltage is
present
[3][4]
0.5 +5.5 V
on open-drain
I2C-bus pins
PIO0_4 and
PIO0_5
[5]
0.5 +5.5 V
V
IA
analog input voltage
[6]
[7]
0.5 4.6 V
V
i(xtal)
crystal input voltage pins configured for
XTALIN and
XTALOUT
[2]
0.5 +2.5 V
V
i(rtcx)
32 kHz oscillator input voltage
[2]
0.5 4.6 V
I
DD
supply current per supply pin - 100 mA
I
SS
ground current per ground pin - 100 mA
I
latch
I/O latch-up current (0.5 V
DD(IO)
) < V
I
< (1.5 V
DD(IO)
);
T
j
< 125 C
- 100 mA
T
stg
storage temperature
[8]
65 +150 C
T
j(max)
maximum junction temperature - 150 C
P
tot(pack)
total power dissipation (per package) based on package
heat transfer, not
device power
consumption
-1.5W
V
esd
electrostatic discharge voltage human body
model; all pins
[9]
-3kV