Datasheet

LPC11E3X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2.3 — 11 September 2014 46 of 71
NXP Semiconductors
LPC11E3x
32-bit ARM Cortex-M0 microcontroller
10. Dynamic characteristics
10.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
10.2 External clock
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
Table 9. Flash characteristics
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming time
[2]
0.95 1 1.05 ms
Table 10. EEPROM characteristics
T
amb
=  40  Cto+85  C; V
DD
= 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure rate <
10 ppm for parts as specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance 100000 1000000 - cycles
t
ret
retention time powered 100 200 - years
unpowered 150 300 - years
t
prog
programming time 64 bytes - 2.9 - ms
Table 11. Dynamic characteristic: external clock
T
amb
=  40  C to +85  C; V
DD
over specified ranges.
[1]
Symbol Parameter Min Typ
[2]
Max Unit
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
 0.4 - - ns
t
CLCX
clock LOW time T
cy(clk)
 0.4 - - ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns