Datasheet

LPC11E3X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2.3 — 11 September 2014 38 of 71
NXP Semiconductors
LPC11E3x
32-bit ARM Cortex-M0 microcontroller
9.1 BOD static characteristics
[1] Interrupt levels are selected by writing the level value to the BOD control register BODCTRL, see the
LPC11Exx user manual.
9.2 Power consumption
Power measurements in Active, Sleep, and Deep-sleep modes were performed under the
following conditions (see the LPC11Exx user manual):
• Configure all pins as GPIO with pull-up resistor disabled in the IOCON block.
• Configure GPIO pins as outputs using the GPIOnDIR registers.
• Write 0 to all GPIOnDATA registers to drive the outputs LOW.
Table 7. BOD static characteristics
[1]
T
amb
=25  C.
Symbol Parameter Conditions Min Typ Max Unit
V
th
threshold voltage interrupt level 1
assertion - 2.22 - V
de-assertion - 2.35 - V
interrupt level 2
assertion - 2.52 - V
de-assertion - 2.66 - V
interrupt level 3
assertion - 2.80 - V
de-assertion - 2.90 - V
reset level 0
assertion - 1.46 - V
de-assertion - 1.63 - V
reset level 1
assertion - 2.06 - V
de-assertion - 2.15 - V
reset level 2
assertion - 2.35 - V
de-assertion - 2.43 - V
reset level 3
assertion - 2.63 - V
de-assertion - 2.71 - V