Datasheet

LPC11E3X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2.3 — 11 September 2014 33 of 71
NXP Semiconductors
LPC11E3x
32-bit ARM Cortex-M0 microcontroller
9. Static characteristics
Table 5. Static characteristics
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
DD
supply voltage (core
and external rail)
1.8 3.3 3.6 V
I
DD
supply current Active mode; V
DD
=3.3V;
T
amb
=25C; code
while(1){}
executed from flash;
system clock = 12 MHz
[2][3][4]
[5][6]
-2-mA
system clock = 50 MHz
[3][4][5]
[6]
-7-mA
Sleep mode;
V
DD
= 3.3 V; T
amb
=25C;
system clock = 12 MHz
[2][3][4]
[5][6]
-1-mA
Deep-sleep mode; V
DD
= 3.3 V;
T
amb
=25C
[3]
- 300 - A
Power-down mode; V
DD
=3.3V;
T
amb
=25C
-2-A
Deep power-down mode;
V
DD
=3.3V; T
amb
=25C
[8]
- 220 - nA
Standard port pins, RESET
I
IL
LOW-level input current V
I
= 0 V; on-chip pull-up resistor
disabled
-0.510nA
I
IH
HIGH-level input
current
V
I
=V
DD
; on-chip pull-down resistor
disabled
-0.510nA
I
OZ
OFF-state output
current
V
O
=0V; V
O
=V
DD
; on-chip
pull-up/down resistors disabled
-0.510nA
V
I
input voltage pin configured to provide a digital
function; V
DD
 1.8 V
[9]
[10]
0- 5.0V
V
DD
= 0 V 0 - 3.6 V
V
O
output voltage output active 0 - V
DD
V
V
IH
HIGH-level input
voltage
0.7V
DD
--V
V
IL
LOW-level input voltage - - 0.3V
DD
V
V
hys
hysteresis voltage - 0.4 - V
V
OH
HIGH-level output
voltage
2.0 V  V
DD
 3.6 V; I
OH
= 4 mA V
DD
 0.4 - - V
1.8 V  V
DD
< 2.0 V; I
OH
= 3 mA V
DD
 0.4 - - V
V
OL
LOW-level output
voltage
2.0 V  V
DD
 3.6 V; I
OL
=4 mA - - 0.4 V
1.8 V  V
DD
< 2.0 V; I
OL
=3 mA - - 0.4 V
I
OH
HIGH-level output
current
V
OH
=V
DD
 0.4 V;
2.0 V  V
DD
 3.6 V
4- - mA
1.8 V  V
DD
< 2.0 V 3- - mA