Datasheet
Table Of Contents
- 1. General description
- 2. Features and benefits
- 3. Applications
- 4. Ordering information
- 5. Block diagram
- 6. Pinning information
- 7. Functional description
- 7.1 ARM Cortex-M0 processor
- 7.2 On-chip flash program memory
- 7.3 On-chip SRAM
- 7.4 Memory map
- 7.5 Nested Vectored Interrupt Controller (NVIC)
- 7.6 IOCONFIG block
- 7.7 Fast general purpose parallel I/O
- 7.8 UART
- 7.9 SPI serial I/O controller
- 7.10 I2C-bus serial I/O controller
- 7.11 C_CAN controller
- 7.12 10-bit ADC
- 7.13 General purpose external event counter/timers
- 7.14 System tick timer
- 7.15 Watchdog timer
- 7.16 Clocking and power control
- 7.17 System control
- 7.18 Emulation and debugging
- 8. Limiting values
- 9. Static characteristics
- 10. Dynamic characteristics
- 11. Application information
- 12. Package outline
- 13. Soldering
- 14. Abbreviations
- 15. Revision history
- 16. Legal information
- 17. Contact information
- 18. Contents

LPC11CX2_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3.1 — 15 May 2013 44 of 62
NXP Semiconductors
LPC11Cx2/Cx4
32-bit ARM Cortex-M0 microcontroller
10. Dynamic characteristics
10.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
10.2 External clock
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
Table 12. Flash characteristics
T
amb
=
40
C to +85
C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 13. Dynamic characteristic: external clock
T
amb
=
40
C to +85
C; V
DD
over specified ranges.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
0.4--ns
t
CLCX
clock LOW time T
cy(clk)
0.4--ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns
Fig 18. External clock timing (with an amplitude of at least V
i(RMS)
= 200 mV)
t
CHCL
t
CLCX
t
CHCX
T
cy(clk)
t
CLCH
002aaa907