Datasheet

LPC1102_1104 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 26 September 2013 29 of 43
NXP Semiconductors
LPC1102/1104
32-bit ARM Cortex-M0 microcontroller
10. Dynamic characteristics
10.1 Power-up ramp conditions
[1] See Figure 15.
[2] The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
10.2 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
Table 8. Power-up characteristics
T
amb
= 40 C to +85 C.
Symbol Parameter Conditions Min Typ Max Unit
t
r
rise time at t = t
1
: 0 < V
I
 400 mV
[1]
0- 500 ms
t
wait
wait time
[1][2]
12 - - s
V
I
input voltage at t = t
1
on pin V
DD
0 - 400 mV
Condition: 0 < V
I
 400 mV at start of power-up (t = t
1
)
Fig 15. Power-up ramp
V
DD
0
400 mV
t
r
t
wait
t = t
1
002aag001
Table 9. Flash characteristics
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100 000 - cycles
t
ret
retention time powered 10 - - years
unpowered 20 - - years
t
er
erase time sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms