Datasheet
Table Of Contents
- 1. General description
- 2. Features and benefits
- 3. Applications
- 4. Ordering information
- 5. Functional diagram
- 6. Pinning information
- 7. Functional description
- 8. Limiting values
- 9. Recommended operating conditions
- 10. Static characteristics
- 11. Dynamic characteristics
- 12. Package outline
- 13. Revision history
- 14. Legal information
- 15. Contact information
- 16. Contents
HEF4066B_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 25 March 2010 4 of 16
NXP Semiconductors
HEF4066B
Quad single-pole single-throw analog switch
10. Static characteristics
10.1 Test circuit
Table 6. Static characteristics
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= −40 °C T
amb
= 25 °C T
amb
= 85 °C T
amb
= 125 °C Unit
Min Max Min Max Min Max Min Max
V
IH
HIGH-level
input voltage
|I
O
| < 1 μA 5 V 3.5 - 3.5 - 3.5 - 3.5 - V
10 V 7.0 - 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - 11.0 - V
V
IL
LOW-level
input voltage
|I
O
| < 1 μA 5 V - 1.5 - 1.5 - 1.5 - 1.5 V
10 V - 3.0 - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 - 4.0 V
I
I
input leakage
current
15 V - ±0.1 - ±0.1 - ±1.0 - ±1.0 μA
I
S(OFF)
OFF-state
leakage
current
per channel;
see Figure 4
15 V - - - 200 - - - - nA
I
DD
supply current all valid input
combinations
5 V - 1.0 - 1.0 - 7.5 - 7.5 μA
10 V - 2.0 - 2.0 - 15.0 - 15.0 μA
15 V - 4.0 - 4.0 - 30.0 - 30.0 μA
C
I
input
capacitance
nE input - - - - 7.5 - - - - pF
Fig 4. Test circuit for measuring OFF-state leakage current
001aak66
9
V
O
V
SS
nE
nZ
V
IL
V
DD
nY
V
I
I
S
