Datasheet

HEF4066B_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 25 March 2010 3 of 16
NXP Semiconductors
HEF4066B
Quad single-pole single-throw analog switch
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
[1] To avoid drawing V
DD
current out of terminal nZ, when switch current flows into terminals nY, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no V
DD
current will flow out of terminals nY, in this case there
is no limit for the voltage drop across the switch, but the voltages at nY and nZ may not exceed V
DD
or V
SS
.
[2] For DIP14 packages: above T
amb
= 70 °C, P
tot
derates linearly with 12 mW/K.
[3] For SO14 packages: above T
amb
= 70 °C, P
tot
derates linearly with 8 mW/K.
9. Recommended operating conditions
Table 3. Function table
[1]
Input nE Switch
HON
LOFF
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to V
SS
= 0 V (ground).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage −0.5 +18 V
I
IK
input clamping current V
I
< −0.5 V or V
I
>V
DD
+ 0.5 V - ±10 mA
V
I
input voltage −0.5 V
DD
+ 0.5 V
I
I/O
input/output current
[1]
- ±10 mA
T
stg
storage temperature −65 +150 °C
T
amb
ambient temperature −40 +85 °C
P
tot
total power dissipation T
amb
= −40 °C to +85 °C
DIP14
[2]
- 750 mW
SO14
[3]
- 500 mW
P power dissipation per switch - 100 mW
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 3 - 15 V
V
I
input voltage 0 - V
DD
V
T
amb
ambient temperature in free air −40 - +125 °C
Δt/ΔV input transition rise and fall
rate
V
DD
= 5 V - - 3.75 μs/V
V
DD
= 10 V - - 0.5 μs/V
V
DD
= 15 V - - 0.08 μs/V