Datasheet

HEF4053B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 11 — 11 September 2014 6 of 20
NXP Semiconductors
HEF4053B
Triple single-pole double-throw analog switch
10.1 Test circuits
10.2 ON resistance
I
DD
supply current I
O
= 0 A 5 V - 5 - 5 - 150 - 150 A
10 V - 10 - 10 - 300 - 300 A
15 V - 20 - 20 - 600 - 600 A
C
I
input
capacitance
Sn, E inputs - - - - 7.5 - - - - pF
Table 6. Static characteristics
…continued
V
SS
= V
EE
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= 25 C T
amb
= 85 C T
amb
= 125 C Unit
Min Max Min Max Min Max Min Max
Fig 8. Test circuit for measuring OFF-state leakage current Z port
I
S
001aaj900
V
DD
V
I
switch
V
SS
= V
EE
S1 to S3
E
nZ
nY0
V
DD
or V
SS
V
DD
nY1
1
2
V
O
Fig 9. Test circuit for measuring OFF-state leakage current nYn port
I
S
001aaj901
V
SS
V
O
switch
V
SS
= V
EE
S1 to S3
E
nZ
nY0
V
DD
or V
SS
V
DD
nY1
1
2
V
I
Table 7. ON resistance
T
amb
= 25  C; I
SW
=200  A; V
SS
= V
EE
= 0 V.
Symbol Parameter Conditions V
DD
 V
EE
Typ Max Unit
R
ON(peak)
ON resistance (peak) V
I
= 0 V to V
DD
 V
EE
;
see Figure 10
and Figure 11
5 V 350 2500 
10 V 80 245 
15 V 60 175 