Datasheet

56F803 Technical Data, Rev. 16
24 Freescale Semiconductor
5. Defines program cycle
6. Defines erase cycle
7. Defines mass erase cycle, erase whole block
8. Defines non-volatile store cycle
Table 3-6 IFREN Truth Table
Mode IFREN = 1 IFREN = 0
Read Read information block Read main memory block
Word program Program information block Program main memory block
Page erase Erase information block Erase main memory block
Mass erase Erase both block Erase main memory block
Table 3-7 Flash Timing Parameters
Operating Conditions: V
SS
= V
SSA
= 0 V, V
DD
= V
DDA
= 3.0–3.6V, T
A
= –40° to +85°C, C
L
≤ 50pF
Characteristic Symbol Min Typ Max Unit Figure
Program time
Tprog*
20 – – us Figure 3-4
Erase time
Terase*
20 – – ms Figure 3-5
Mass erase time
Tme*
100 – – ms Figure 3-6
Endurance
1
E
CYC
10,000 20,000 – cycles
Data Retention
1
D
RET
10 30 – years
The following parameters should only be used in the Manual Word Programming Mode
PROG/ERASE to NVSTR set up time
Tnv*
–5–usFigure 3-4,
Figure 3-5,
Figure 3-6
NVSTR hold time
Tnvh*
–5–usFigure 3-4,
Figure 3-5
NVSTR hold time (mass erase)
Tnvh1*
– 100 – us Figure 3-6
NVSTR to program set up time
Tpgs*
–10–usFigure 3-4
Recovery time
Trcv*
–1–usFigure 3-4,
Figure 3-5,
Figure 3-6