Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T
hs
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.12. Test Circuit RBSOA.
V
CC
= 150 V; -V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 0.5 - 2 µH;
C
FB
= 1 - 3 nF; I
B(end)
= 0.8 - 4 A
0.01 0.1 1 10 100
1
10
100
hFE BU2727A/AF
IC / A
VCE = 1 V
Ths = 25 C
Ths = 85 C
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-06 1E-04 1E-02 1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
0.1 1 10 100
0.01
0.1
1
10
BU2727A/AFVCEsat / V
Ths = 85 C
Ths = 25 C
IC/IB = 12
IC/IB = 5
IC / A
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
01234
0.6
0.7
0.8
0.9
1
VBEsat / V BU2727A/AF
IB / A
IC = 6 A
4 A
Ths = 85 C
Ths = 25 C
September 1997 4 Rev 1.100