Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms (64 kHz).
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
V
ICsat
I end
16 us
6.5 us5 us
t
t
t
TRANSISTOR
DIODE
B
I
C
I
B
CE
BU2727A/AF
0.01 0.1 1 10 100
1
10
100
hFE
IC / A
VCE = 5 V
Ths = 25 C
Ths = 85 C
September 1997 3 Rev 1.100