Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2720DX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
IC
IB
VCE
ICsat
IBend
64us
26us20us
t
t
t
TRANSISTOR
DIODE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2720/22DF
0.01 0.1 1 10 100
1
10
100
Ths = 25 C
Ths = 85 C
VCE = 5 V
hFE
IC / A
September 1997 3 Rev 1.300