Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708DF
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T
hs
)
Fig.12. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.13. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 1 - 3 µH;
C
FB
= 1 - 4 nF; I
B(end)
= 0.8 - 4 A
Fig.14. Reverse bias safe operating area. T
j
≤ T
jmax
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
1.0E-06 1E-04 1E-02 1E+00
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU2708AF/DF
tp / sec
Zth / K/W
D =
D =
t
p
t
p
T
T
P
t
D
100 1000
0
2
4
6
8
10
12
14
16
VCE / V
IC / A
BU2708AF/DF
Area where
Fails occur
1700
September 1997 5 Rev 1.400