Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708DF
Fig.5. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.8. Limit P
tot
; T
j
= 85˚C
P
tot
= f (I
B(end)
); I
C
= 3.5 A; f = 16 kHz
Fig.9. Limit P
tot
; T
j
= 85˚C
P
tot
= f (I
B(end)
); I
C
= 4.0 A; f = 16 kHz
Fig.10. Limit storage and fall time.
t
s
= f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
0.01 0.1 1 10 100
1
10
100
hFE BU2708DF
IC / A
Ths = 25 C
Ths = 85 C
VCE = 1 V
0 0.5 1 1.5 2
1
10
PTOT / W BU2708AF/DF
IB / A
IC = 3.5 A
f = 16 kHz
Tj = 85 C
0.1 1 10 100
0.01
0.1
1
10
Tj = 85 C
Tj = 25 C
IC/IB = 8
IC/IB = 4
VCEsat / V
IC / A
BU2708DF
0 0.5 1 1.5 2
1
10
PTOT / W BU2708AF/DF
IB / A
IC = 4 A
f = 16 kHz
Tj = 85 C
0 0.5 1 1.5 2
0.6
0.7
0.8
0.9
1
1.1
1.2
Tj = 25 C
Tj = 85 C
VBEsat / V BU2708DF
IB / A
IC = 4A
3A
0 0.5 1 1.5 2
0
2
4
6
8
10
ts/tf / us BU2708AF/DF
IC = 3.5AIC = 4A
IB / A
September 1997 4 Rev 1.400