Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2708DF
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink without heatsink compound - 3.7 K/W
R
th j-hs
Junction to heatsink with heatsink compound - 2.8 K/W
R
th j-a
Junction to ambient in free air 35 - K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
- - 1.0 mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
; - - 2.0 mA
T
j
= 125 ˚C
BV
EBO
Emitter-base breakdown voltage I
B
= 600 mA 7.5 13.5 - V
R
BE
Base-emitter resistance V
EB
= 7.5 V 45 Ω
V
CEsat
Collector-emitter saturation voltage I
C
= 4 A; I
B
= 1.33 A - - 1.0 V
V
BEsat
Base-emitter saturation voltage I
C
= 4 A; I
B
= 1.33 A 0.83 0.91 1.00 V
V
F
Diode forward voltage I
F
= 4 A 1.6 V
h
FE
DC current gain I
C
= 1 A; V
CE
= 5 V - 15 -
h
FE
I
C
= 4 A; V
CE
= 1 V 3 6 7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (line deflection I
Csat
= 4 A; L
C
= 1 mH; C
FB
= 12.2 nF;
circuit 16 kHz) V
CC
= 120 V; I
B(end)
= 0.8 A; L
B
= 6 µH;
-V
BB
= 4 V; -I
BM
= I
CM
/2
t
s
Turn-off storage time 4.8 5.5 µs
t
f
Turn-off fall time 0.4 0.52 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.400