Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 64 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 64 kHz
0.1 1 10
IC / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1 1 10
IB / A
VCESAT / V
BU2525AF
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0.1 10
IC / A
VCESAT / V
BU2525AF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1001
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
100
10
1
Poff / W
BU2527AF
IC =
6A
5A
0 1 2 3 4
IB / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
4
3.5
3
2.5
2
1.5
1
0.5
0
ts, tf / us
BU2527AF
IC =
6A
5A
September 1997 4 Rev 1.200