Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
Fig.4. Switching times test circuit .
Fig.5. Test Circuit RBSOA. V
CC
= 140 V; -V
BB
= 4 V;
L
C
= 100 - 200 µ H; V
CL
≤ 1500 V; L
B
= 3 µ H;
C
FB
= 1 - 2.2 nF; I
B
(end) = 1 - 2 A
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
V
ICsat
I end
16 us
6.5 us5 us
t
t
t
TRANSISTOR
DIODE
B
I
C
I
B
CE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
BU2525DF
0.1 1 10 100
1
10
100
hFE
IC / A
5 V
1V
Tj = 25 C
Tj = 125 C
September 1997 3 Rev 1.200