Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
Fig.14. Forward bias safe operating area. T
mb
= 25 ˚C
I
CDC
& I
CM
= f(V
CE
); I
CM
single pulse; parameter t
p
;
Second-breakdown limits independant of temperature.
BU2525AIC / A
100
10
1
0.1
0.01
1 10 100 1000
VCE / V
ICM
ICDC
Ptot
100 us
1 ms
10 ms
DC
40 us
tp =
= 0.01
September 1997 5 Rev 1.100