Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.10. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 32 kHz
Fig.11. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 32 kHz
Fig.12. Normalised power dissipation.
PD% = 100 ⋅ P
D
/P
D 25˚C
= f (T
mb
)
Fig.13. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0.1 1 10
IB / A
VCESAT / V
BU2525A
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0 20 40 60 80 100 120 140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.1 1 10
IB / A
Eoff / uJ
BU2525A
1000
100
10
IC = 8 A
7 A
1E-06 1E-04 1E-02 1E+00
t / s
Zth / (K/W)
BU2525A
D = 0
0.02
0.05
0.1
0.2
0.5
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
0.1 1 10
IB / A
ts, tf / us
BU2525A
12
11
10
9
8
7
6
5
4
3
2
1
0
32 kHz
ts
tf
IC =
7 A
8 A
September 1997 4 Rev 1.100