Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
Fig.4. Switching times test circuit
Fig.5. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.6. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
0.1 1 10
IC / A
VBESAT / V
BU2525A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1 10
IC / A
VCESAT / V
BU2525A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1001
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1 1 10 100
1
10
100
hFE BU2525D
IC / A
5 V
1V
Tj = 25 C
Tj = 125 C
0 1 2 3 4
IB / A
VBESAT / V
BU2525A
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
September 1997 3 Rev 1.100