Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
Fig.4. Switching times test circuit .
Fig.5. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.6. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
I
IBend
32us
13us10us
t
t
t
TRANSISTOR
DIODE
Csat
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2525DF
0.1 1 10 100
1
10
100
hFE
IC / A
5 V
1V
Tj = 25 C
Tj = 125 C
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
0.1 1 10
IC / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
September 1997 3 Rev 1.200