Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
- - 1.0 mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
; - - 2.0 mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current V
EB
= 6.0 V; I
C
= 0 A 72 110 218 mA
R
eb
Base-emitter resistance V
EB
= 6.0 V - 55 - Ω
BV
EBO
Emitter-base breakdown voltage I
B
= 600 mA 7.5 13.5 - V
V
CEOsust
Collector-emitter sustaining voltage I
B
=0A ;I
c
= 100mA 800 - - V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage I
C
= 8.0 A; I
B
= 1.6 A - - 5.0 V
V
BEsat
Base-emitter saturation voltage I
C
= 8.0 A; I
B
= 1.6 A - - 1.1 V
h
FE
DC current gain I
C
= 1 A; V
CE
= 5 V - 11 -
h
FE
I
C
= 8 A; V
CE
= 5 V 5 7 9.5
V
F
Diode forward voltage I
F
= 8 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
Collector capacitance I
E
= 0 A; V
CB
= 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line I
Csat
= 8.0 A; L
C
= 260 µH; C
fb
= 13 nF;
deflection circuit) I
B(end)
= 1.1 A; L
B
= 2.5 µH; -V
BB
= 4 V;
(-dI
B
/dt = 1.6 A/µs)
t
s
Turn-off storage time 3.0 4.0 µs
t
f
Turn-off fall time 0.2 0.35 µs
V
fr
Anti-parallel diode forward recovery I
F
= 8 A; dI
F
/dt = 50 A/µs16-V
voltage
t
fr
Anti-parallel diode forward recovery V
F
= 5 V 410 - ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200