Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.4. Switching times test circuit .
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.6. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
V
ICsat
I end
16 us
6.5 us5 us
t
t
t
TRANSISTOR
DIODE
B
I
C
I
B
CE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2523DF/X
0.01 0.1 1 10 100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
time
time
V
F
V
fr
V
F
I
F
fr
t
10%
5 V
I
F
BU2523DF/X
0.01 0.1 1 10 100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
September 1997 3 Rev 1.200