Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523AX
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 5.5 A; T
j
= 85˚C; f = 64 kHz
Fig.10. Normalised power dissipation.
PD% = 100 ⋅ P
D
/P
D 25˚C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.12. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 0.3 - 2 µ H;
C
FB
= 0.5 - 8 nF; I
B(end)
= 0.55 - 1.1 A
Fig.13. Reverse bias safe operating area. T
j
≤ T
jmax
Fig.14. I
Csat
during normal running vs. frequency of
operation for optimum performance
0 0.5 1 1.5 2
0
1
2
3
4
5
ts/tf / us BU2523AF/DF/AX/DX
IB / A
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
100 1000
0
10
20
30
VCE / V
IC / A
BU2523
Area where
fails occur
1500
0 1020304050607080
0
1
2
3
4
5
6
7
8
BU2523AF/AX
frequency (kHz)
Ic(sat) (A)
1E-06 1E-04 1E-02 1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
September 1997 4 Rev 1.100