Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523AF
Fig.3. Switching times test circuit
.
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
=5.5 A; f = 64 kHz
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1 1 10 100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V BU2523AF/X
IC / A
BU2523AF/X
0.01 0.1 1 10 100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
01234
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V BU2523AF/X
IB / A
IC = 6 A
IC = 4.5 A
Ths = 25 C
Ths = 85 C
BU2523AF/X
0.01 0.1 1 10 100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
BU2523AF/DF/AX/DX
0 0.5 1 1.5 2
1
10
100
PTOT / W
IB / A
Ths = 25 C
Ths = 85 C
September 1997 3 Rev 1.100