Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
- - 1.0 mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
; - - 2.0 mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current V
EB
= 7.5 V; I
C
= 0 A - - 1.0 mA
BV
EBO
Emitter-base breakdown voltage I
B
= 1 mA 7.5 13.5 - V
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA; 800 - - V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage I
C
= 5.5 A; I
B
= 1.1 A - - 5.0 V
V
BEsat
Base-emitter saturation voltage I
C
= 5.5 A; I
B
= 1.1 A - - 1.0 V
h
FE
DC current gain I
C
= 1 A; V
CE
= 5 V - 14 -
h
FE
I
C
= 5.5 A; V
CE
= 5 V 5 8 10.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (64 kHz line I
Csat
= 5.5 A; L
C
= 200 µH; C
fb
= 4 nF;
deflection circuit) V
CC
145 V; I
B(end)
= 0.56 A;
L
B
= 0.4 µH; -V
BB
= -4 V; -I
BM
= 3.3 A
t
s
Turn-off storage time 1.5 2.0 µs
t
f
Turn-off fall time 0.15 0.3 µs
Fig.1. Switching times waveforms. Fig.2. Switching times definitions.
V
ICsat
I end
16 us
6.5 us5 us
t
t
t
TRANSISTOR
DIODE
B
I
C
I
B
CE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100