Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
Fig.13. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.14. Reverse bias safe operating area. T
j
≤ T
jmax
Fig.15. Forward bias safe operating area. T
hs
= 25 ˚C
I
CDC
& I
CM
= f(V
CE
); I
CM
single pulse; parameter t
p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
1E-06 1E-04 1E-02 1E+00
t / s
Zth / (K/W)
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
10
1
0.1
0.01
0.001
BU2520AFIC / A
100
10
1
0.1
0.01
1 10 100 1000
VCE / V
100 us
1 ms
10 ms
DC
30 us
tp =
Ptot
ICM
ICDC
= 0.01
BU2522AF
0
30
20
10
0
500 1000 1500
VCE / V
IC / A
September 1997 5 Rev 1.200