Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.10. Typical turn-off losses. T
j
= 85˚C
Poff = f (I
B
); parameter I
C
; f = 64 kHz
Fig.11. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 64 kHz
Fig.12. Normalised power dissipation.
PD% = 100 ⋅ P
D
/P
D 25˚C
= f (T
hs
)
0.1 10
IC / A
VCESAT / V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1001
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Poff / W
BU2522AF
100
10
1
IC =
6A
5A
0 1 2 3 4
IB / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
ts, tf / us
BU2522AF
4
3.5
3
2.5
2
1.5
1
0.5
0
IC =
6A
5A
0.1 1 10
IB / A
VCESAT / V
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
September 1997 4 Rev 1.200