Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
Fig.1. Switching times waveforms (64 kHz).
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit .
Fig.4. Test Circuit RBSOA. V
CC
= 140 V; -V
BB
= 4 V;
L
C
= 100 - 400 µ H; V
CL
≤ 1500 V; L
B
= 3 µ H;
C
FB
= 1 - 2.2 nF; I
B
(end) = 1.6 - 2 A
Fig.5. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.6. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
V
ICsat
I end
16 us
6.5 us5 us
t
t
t
TRANSISTOR
DIODE
B
I
C
I
B
CE
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1 10
IC / A
hFE
100
10
1
1001
Tj = 25 C
Tj = 125 C
5 V
1 V
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1 1 10
IC / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
September 1997 3 Rev 1.200