Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
- - 1.0 mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
; - - 2.0 mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current V
EB
= 7.5 V; I
C
= 0 A - 150 - mA
BV
EBO
Emitter-base breakdown voltage I
B
= 600 mA 7.5 13.5 - V
R
be
Base-emitter resistance V
EB
= 7.5 V - 50 - Ω
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA; 800 - - V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage I
C
= 6.0 A; I
B
= 1.2 A - - 5.0 V
V
BEsat
Base-emitter saturation voltage I
C
= 6.0 A; I
B
= 1.2 A - - 1.1 V
h
FE
DC current gain I
C
= 1.0 A; V
CE
= 5 V - 13 -
h
FE
I
C
= 6 A; V
CE
= 5 V 5 7 10
V
F
Diode forward voltage I
F
= 6 A - - 2.2 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
Collector capacitance I
E
= 0 A; V
CB
= 10 V; f = 1 MHz 115 - pF
Switching times (64 kHz line I
CM
= 6.0 A; L
C
= 170 µH; C
fb
= 5.4 nF;
deflection circuit) I
B(end)
= 0.7 A; L
B
= 0.6 µH; -V
BB
= 2 V;
(-dI
B
/dt = 3.33 A / µs)
t
s
Turn-off storage time 1.7 2.0 µs
t
f
Turn-off fall time 0.12 0.25 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200