Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2515DF
Fig.13. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 0.3 - 2 µ H;
C
FB
= 0.5 - 8 nF; I
B(end)
= 0.65 - 1.3 A
Fig.14. Reverse bias safe operating area. T
j
≤ T
jmax
Fig.15. I
Csat
during normal running vs. frequency of
operation for optimum performance
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0 1020304050607080
0
1
2
3
4
5
6
7
8
BU2515AF/AX
frequency (kHz)
Ic(sat) (A)
100 1000
0
10
20
30
VCE / V
IC / A BU2515
Area where
fails occur
1500
September 1997 5 Rev 1.200