Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507AX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit .
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICsat
IBend
64us
26us20us
t
t
t
TRANSISTOR
DIODE
0.01 0.1 1 10 100
1
10
100
IC / A
hFE
VCE = 1 V
Ths = 25 C
Ths = 85 C
BU2507AF/X
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2507AF/X
0.01 0.1 1 10 100
1
10
100
IC / A
hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
110
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
BU2507AF/X
IC / A
VCEsat / V
IC/IB = 3
IC/IB = 4
IC/IB = 5
September 1997 3 Rev 1.100