Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507AF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
= 4 A; f = 16 kHz
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 4.0 A; T
j
= 85˚C; f = 16 kHz
Fig.10. Normalised power dissipation.
PD% = 100 ⋅ P
D
/P
D 25˚C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0 0.5 1 1.5 2
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBEsat / V
Ths = 25 C
Ths = 85 C
BU2507AF/AX
IC = 4 A
IC = 3 A
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2507AF/DF/AX/DX
0 0.5 1 1.5 2
0.1
1
IB / A
Ptot / W
10
Ths = 25 C
Ths = 85 C
1E-06 1E-4 10E-2 1E+00
0.001
0.01
0.1
1
10
BU2507AF/X/DF/X
t / s
Zth / K/W
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
0 0.5 1 1.5 2
0
2
4
6
8
10
BU2507AF/AX/Df/DX85ts/tf
IB / A
ts/tf/ us
September 1997 4 Rev 1.100