Datasheet

2004 Dec 09 5
NXP Semiconductors Product data sheet
PNP Darlington transistors BST60; BST61; BST62
Fig.2 DC current gain; typical values.
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0
6000
2000
1000
3000
4000
5000
MGD839
−10
−1
−1 −10 −10
2
−10
3
h
FE
I
C
(mA)
V
CE
= −10 V.
Fig.3 Test circuit for switching times.
h
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R
C
R2
R1
DUT
MGD624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
i
V
CC
V
i
= −10 V; T = 200 μs; t
p
= 6 μs; t
r
= t
f
≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18 Ω.
V
BB
= 1.8 V; V
CC
= −10.7 V.
Oscilloscope: input impedance Z
i
= 50 Ω.