Datasheet

2004 Dec 09 4
NXP Semiconductors Product data sheet
PNP Darlington transistors BST60; BST61; BST62
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
collector-emitter cut-off current
BST60 V
BE
= 0 V; V
CE
= −45 V − − −50 nA
BST61 V
BE
= 0 V; V
CE
= −60 V − − −50 nA
BST62 V
BE
= 0 V; V
CE
= −80 V − − −50 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= −4 V − − −50 nA
h
FE
DC current gain V
CE
= −10 V; note 1; see Fig.2
I
C
= −150 mA 1 000 − −
I
C
= −500 mA 2 000 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −500 mA; I
B
= −0.5 mA − − −1.3 V
I
C
= −500 mA; I
B
= −0.5 mA;
T
j
= 150 °C
− − −1.3 V
V
BEsat
base-emitter saturation voltage I
C
= −500 mA; I
B
= −0.5 mA − − −1.9 V
f
T
transition frequency I
C
= −500 mA; V
CE
= −5 V;
f
= 100 MHz
− 200 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= −500 mA; I
Bon
= −0.5 mA;
I
Boff
= 0.5 mA
− 500 − ns
t
off
turn-off time − 700 − ns