Datasheet

2004 Dec 14 3
NXP Semiconductors Product data sheet
NPN high-voltage transistors BST39; BST40
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BST39 − 400 V
BST40 − 300 V
V
CEO
collector-emitter voltage open base
BST39 − 350 V
BST40 − 250 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.3 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 96 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= 300 V − 20 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= 5 V − 100 nA
h
FE
DC current gain I
C
= 20 mA; V
CE
= 10 V 40 −
V
CEsat
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA − 500 mV
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz − 2 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 70 − MHz