Datasheet

2004 Mar 12 3
NXP Semiconductors Product data sheet
NPN high voltage transistor BSS64
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 90 V − − 100 nA
I
E
= 0; V
CB
= 90 V; T
j
= 150 °C − − 50 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 5 V − 0.5 200 nA
h
FE
DC current gain I
C
= 1 mA; V
CE
= 1 V − 60 −
I
C
= 10 mA; V
CE
= 1 V 20 80 −
I
C
= 20 mA; V
CE
= 1 V − 55 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 4 mA; I
B
= 400 µA − − 150 mV
I
C
= 50 mA; I
B
= 15 mA − − 200 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 3 − pF
f
T
transition frequency I
C
= 4 mA; V
CE
= 10 V; f = 100 MHz 60 100 − MHz