Datasheet

2004 Jan 13 4
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
h
FE
DC current gain I
C
= 0.1 mA; V
CE
= 10 V; note 1 35 −
I
C
= 1 mA; V
CE
= 10 V; note 1 50 −
I
C
= 10 mA; V
CE
= 10 V; note 1 75 −
I
C
= 150 mA; V
CE
= 10 V; note 1 100 300
I
C
= 150 mA; V
CE
= 1 V; note 1 50 −
DC current gain I
C
= 500 mA; V
CE
= 10 V; note 1
BSR13 30 −
BSR14 40 −
V
CEsat
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA
BSR13 − 400 mV
BSR14 − 300 mV
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA
BSR13 − 1 .6 V
BSR14 − 1 V
V
BEsat
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA
BSR13 − 1 .3 V
BSR14 0.6 1.2 V
base-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA
BSR13 − 2 .6 V
BSR14 − 2 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 8 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 20 V;
f
= 100 MHz
BSR13 250 − MHz
BSR14 300 − MHz
Switching times (between 10% and 90% levels); see Fig.2
t
on
turn-on time I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
= −15 mA
− 35 ns
t
d
delay time − 15 ns
t
r
rise time − 20 ns
t
off
turn-off time − 250 ns
t
s
storage time − 200 ns
t
f
fall time − 60 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT