Datasheet

1999 Jul 23 5
Philips Semiconductors Product specification
PNP switching transistor BSR12
handbook, halfpage
MGS460
50 Ω
R2
R3
C
V
BB
R1
V
CC
= −3 V
V
i
DUT
V
o
handbook, full pagewidth
20
70
h
FE
MGS461
30
40
50
60
−10
−1
−1 −10 −10
3
−10
2
I
C
(mA)
typ
Fig.2 Test circuit for switching times.
R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF.
Pulse generator: Pulse duration t
p
= 400 ns. Rise time t
r
< 1 ns. Output impedance Z
O
=50Ω.
Sampling scope: Rise time t
r
< 1 ns. Input impedance Z
i
= 100 kΩ.
Fig.3 DC current gain; typical values.
V
CE
= − 1 V; T
amb
=25°C.