Datasheet

1999 Jul 23 4
Philips Semiconductors Product specification
PNP switching transistor BSR12
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 µs; δ = 0.01.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −10 V −−−50 nA
I
E
=0;V
CB
= −10 V; T
amb
= 125 °C −−−5µA
I
CES
collector cut-off current V
BE
= 0; V
CE
= −10 V −−−50 nA
V
(BR)CBO
breakdown voltage I
E
= 0; I
C
= −10 µA −15 −−V
V
(BR)CES
breakdown voltage V
BE
= 0; I
C
= −10 µA −15 −−V
V
(BR)EBO
breakdown voltage I
C
= 0; I
E
= −100 µA −3 −−V
V
CEOsust
collector-emitter sustaining
voltage
I
B
= 0; I
C
= −10 mA −15 −−V
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1 mA; note 1 −−−130 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 −−180 −270 mV
I
C
= −100 mA; I
B
= −10 mA; note 1 −−−450 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1 mA; note 1 −725 −−920 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 −800 −−1150 mV
I
C
= −100 mA; I
B
= −10 mA; note 1 −900 −−1500 mV
h
FE
DC current gain I
C
= −1 mA; V
CE
= −1 V; note 1 30 −−
I
C
=−10 mA; V
CE
= −1 V; note 1 30 −−
I
C
=−50 mA; V
CE
= −1 V; note 1 30 − 120
I
C
= −50 mA; V
CE
= −1V;
T
amb
=55°C; note 1
30 −−
I
C
=−100 mA; V
CE
= −1 V; note 1 20 −−
f
T
transition frequency IC = −50 mA; V
CE
= −10 V;
f = 500 MHz
1.5 −−GHz
C
c
collector capacitance I
E
=I
e
= 0; V
CB
= −5V −−4.5 pF
C
e
emitter capacitance I
C
=I
c
= 0; V
EB
= −0.5 V −−6pF
Switching time (see Fig.2)
t
on
turn-on time V
i
=−6.85 V; V
BB
=0V;
I
Con
= −30 mA; I
Bon
= −3.0 mA
−−20 ns
t
off
turn-off time V
i
= 11.7 V; V
BB
=−9.85 V;
I
Con
= −30 mA; I
Bon
= −3 mA;
I
Boff
=3mA
−−30 ns