Datasheet

1999 Jul 23 2
Philips Semiconductors Product specification
PNP switching transistor BSR12
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
PINNING
MARKING
PIN DESCRIPTION
1 base
2 emitter
3 collector
TYPE NUMBER MARKING CODE
BSR12 B5p
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−15 V
V
CEO
collector-emitter voltage open base −−15 V
I
CM
peak collector current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
j
junction temperature − 150 °C
h
FE
DC current gain I
C
= −10 mA; V
CE
= −1V 30 −
I
C
=−50 mA; V
CE
= −1 V 30 120
f
T
transition frequency f = 500 MHz; I
C
= −50 mA; V
CE
= −10 V 1.5 − GHz
t
off
turn-off time I
Con
= −30 mA; I
Bon
= −3 mA; I
Boff
= 3mA − 30 ns