Datasheet

BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 3 December 2010 9 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
T
case
= 25 °C.
(1) RL
in
(2) RL
out
(3) ISL
P
L
= 17 dBm; tone spacing = 1 MHz.
(1) T
case
= 25 °C
(2) T
case
= 85 °C
(3) T
case
= −40 °C
Fig 8. Input return loss, output return loss and
isolation as a function of frequency
Fig 9. Output third-order intercept point as a function
of frequency
f (GHz)
0.92 0.960.950.93 0.94
001aam172
−35
−30
−25
−20
−15
−10
−5
(2)
(3)
(1)
RL
in
, RL
out
, ISL
(dB)
0
f (GHz)
0.92 0.960.950.93 0.94
001aam173
40
42
38
44
46
IP3
O
(dBm)
36
(1)
(2)
(3)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
(1) f = 920 MHz; ACPR measured at f ± 5 MHz
(2) f = 960 MHz; ACPR measured at f ± 5 MHz
(3) f = 920 MHz; ACPR measured at f ± 10 MHz
(4) f = 960 MHz; ACPR measured at f ± 10 MHz
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 920 MHz; ACPR measured at f ± 5 MHz
(2) f = 960 MHz; ACPR measured at f ± 5 MHz
(3) f = 920 MHz; ACPR measured at f ± 10 MHz
(4) f = 960 MHz; ACPR measured at f ± 10 MHz
Fig 10. Adjacent channel power ratio as a function of
average output power
Fig 11. Adjacent channel power ratio as a function of
average output power
P
L(AV)
(dBm)
0252010 155
001aam523
−40
−60
−20
0
ACPR
(dBc)
−80
(1)
(2)(2)
(3)
(4)
P
L(AV)
(dBm)
0252010 155
001aam524
0
ACPR
(dBc)
−20
−40
−60
−70
−50
−30
−10
(1)
(2)(2)
(3)
(4)